JPH0465530B2 - - Google Patents

Info

Publication number
JPH0465530B2
JPH0465530B2 JP2206101A JP20610190A JPH0465530B2 JP H0465530 B2 JPH0465530 B2 JP H0465530B2 JP 2206101 A JP2206101 A JP 2206101A JP 20610190 A JP20610190 A JP 20610190A JP H0465530 B2 JPH0465530 B2 JP H0465530B2
Authority
JP
Japan
Prior art keywords
gate
insulating film
substrate
drain
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2206101A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03129740A (ja
Inventor
Takeya Ezaki
Oonori Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11072477A external-priority patent/JPS5444482A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP20610190A priority Critical patent/JPH03129740A/ja
Publication of JPH03129740A publication Critical patent/JPH03129740A/ja
Publication of JPH0465530B2 publication Critical patent/JPH0465530B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP20610190A 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法 Granted JPH03129740A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20610190A JPH03129740A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11072477A JPS5444482A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture
JP20610190A JPH03129740A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11072477A Division JPS5444482A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPH03129740A JPH03129740A (ja) 1991-06-03
JPH0465530B2 true JPH0465530B2 (en]) 1992-10-20

Family

ID=26450281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20610190A Granted JPH03129740A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH03129740A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4757279B2 (ja) * 2008-05-07 2011-08-24 株式会社京都西川 敷ふとん形態の家庭用電気治療器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5232277A (en) * 1975-09-05 1977-03-11 Toshiba Corp Insulated gate type field-effect transistor
JPS5250686A (en) * 1975-10-22 1977-04-22 Hitachi Ltd Production of semiconductor device
JPS5284981A (en) * 1976-01-06 1977-07-14 Mitsubishi Electric Corp Production of insulated gate type semiconductor device

Also Published As

Publication number Publication date
JPH03129740A (ja) 1991-06-03

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